tm ?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fgpf30n30t rev. a1 fgpf30n30t 300v, 30a pdp trench igbt august 2007 absolute maximum ratings thermal characteristics notes : (1) repetitive tese, pulse width = 100usec, duty = 0.1 symbol description ratings units v ces collector to emitter voltage 300 v v ges gate to emitter voltage 30 v i c pulse (1) pulsed collector current @ t c = 25 o c80 a p d maximum power dissipation @ t c = 25 o c44.6 w maximum power dissipation @ t c = 100 o c17.8 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 2.8 o c / w r ja thermal resistance, junction to ambient - 62.5 o c / w to-220f 1.gate 2.collector 3.emitter 1 g c e fgpf30n30t 300v, 30a pdp trench igbt features ? high current capability ? low saturation voltage: v ce(sat) =1.4v @ i c = 20a ? high input impedance ? fast switching ?rohs complaint applications ? pdp system general description using novel trench igbt technology, fairchild?s new series of trench igbts offer the optimum performance for pdp applica- tions where low conduction and swit ching losses are essential. *i c _pluse limited by max tj
2 www.fairchildsemi.com fgpf30n30t rev. a1 fgpf30n30t 300v, 30a pdp trench igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box fgpf30n30t FGPF30N30TTU to-220f rail / tube 50ea - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 300 - - v ? bv ces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a -0.26-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 100 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 3.0 4.5 5.5 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v -1.21.5v i c = 20a , v ge = 15v -1.5- v i c = 30a , v ge = 15v, t c = 25 o c -1.7- v i c = 30a , v ge = 15v, t c = 125 o c -1.6 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1540 -- pf c oes output capacitance - 65 -- pf c res reverse transfer capacitance - 55 -- pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 20 ? , v ge = 15v, inductive load, t c = 25 o c -22--ns t r rise time - 33 -- ns t d(off) turn-off delay time - 130 -- ns t f fall time - 180 300 ns t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 20 ? , v ge = 15v, inductive load, t c = 125 o c -21--ns t r rise time - 34 -- ns t d(off) turn-off delay time - 140 -- ns t f fall time - 260 -- ns q g total gate charge v ce = 200v, i c = 20a, v ge = 15v -65--nc q ge gate to emitter charge - 10 -- nc q gc gate to collector charge - 26 -- nc
3 www.fairchildsemi.com fgpf30n30t rev. a1 fgpf30n30t 300v, 30a pdp trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage character istics figure 3. typical saturation voltage figure 4. transfer characteristics c h a r a c t e r i t i c s figure 5. saturation voltage vs. case figur e 6. saturation voltage vs. vge te mperature at variant current level 0.0 1.5 3.0 4.5 6.0 0 20 40 60 80 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 0 20 40 60 80 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 0.8 1.0 1.2 1.4 1.6 1.8 2.0 30a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 3691215 0 4 8 12 16 20 i c = 10a 20a 30a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 01234 0 20 40 60 80 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 20 40 60 80 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v]
4 www.fairchildsemi.com fgpf30n30t rev. a1 fgpf30n30t 300v, 30a pdp trench igbt typical performance characteristics (continued) figure 7. saturation voltage vs. vge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resistance 110 0 500 1000 1500 2000 2500 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 3691215 0 4 8 12 16 20 i c = 10a 30a 20a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0 20406080 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 0.01 0.1 1 10 100 i c max (pulse) i c max (continuous) single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 600 1ms 10 ms dc 50 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 300 0 1020304050 10 100 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 5 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 5
5 www.fairchildsemi.com fgpf30n30t rev. a1 fgpf30n30t 300v, 30a pdp trench igbt typical performance characteristics (continued) figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs gate resistance figure 16. switching loss vs collector current figure 18. transient thermal impedance of igbt 5 1015202530 10 100 5 common emitter v ge = 15v, r g = 20 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 200 5 1015202530 100 800 common emitter v ge = 15v, r g = 20 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 50 0 1020304050 100 1000 20 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 1800 5 1015202530 10 100 500 common emitter v ge = 15v, r g = 20 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a] 5 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 10 0.01 0.02 0.05 0.5 0.2 0.1 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c t 1 p dm t 2
6 www.fairchildsemi.com fgpf30n30t rev. a1 fgpf30n30t 300v, 30a pdp trench igbt mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 dimensions in millimeters
fgpf30n30t 300v, 30a pdp trench igbt 7 www.fairchildsemi.com fgpf30n30t rev. a1 trademarks the following are registered and unregistered trademarks and service ma rks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili ty, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life suppor t devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expec ted to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? got? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? pdp-spm? power220 ? power247 ? poeweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this dat asheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first producti on this datasheet contains preliminar y data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time wit hout notice to improve design. no identification needed full production this datasheet cont ains final specifications . fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been dis- continued by fairchild semiconductor.the datasheet is printed for refer- ence information only. tm rev. i29 tm
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